2SC5480 silicon npn triple diffused horizntal deflection output ade-208-632 (z) 1st. edition oct. 1, 1998 features high breakdown voltage v ces = 1500 v isolated package toC3pfm built-in damper diode outline to?pfm 1. base 2. collecto r 3. emitter 1 2 3 c e b 2 3 1
2SC5480 2 absolute maximum ratings (ta = 25 c) item symbol ratings unit collector to emitter voltage v ces 1500 v emitter to base voltage v ebo 5v collector current i c 14 a collector peak current i c(peak) 28 a collector power dissipation p c note1 50 w junction temperature tj 150 c storage temperature tstg C55 to +150 c collector to emitter diode forward current i d 14 a note: 1. value at tc = 25 c electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions emitter to base breakdown voltage v (br)ebo 5 v i e = 500ma, i c = 0 collector cutoff current i ces 500 m av ce = 1500v, r be = 0 dc current transfer ratio h fe1 5 25 v ce = 5 v, i c = 1a dc current transfer ratio h fe2 47 v ce = 5 v, i c = 10a collector to emitter saturation voltage v ce(sat) 5 v i c = 10a, i b = 2.5a base to emitter saturation voltage v be(sat) 1.5 v i c = 10a, i b = 2.5a collector to emitter diode forward voltage v ecf 2 v i f = 14a fall time t f 0.2 0.4 m si cp = 7a, i b1 = 2.4a f h = 31.5khz
2SC5480 3 main characteristics 80 60 40 20 0 50 100 150 200 100 10 0510 0.1 0.2 0.5 1 25 20 1 5 2 10 20 50 100 collector power dissipation pc (w) case temperature tc (?) collector power dissipation vs. temperature collector to emitter voltage v (v) ce collector current i (a) c typical output characteristics dc current transfer ratio h fe collector current i (a) c dc current transfer ratio vs. collector current collector current i (a) collector to emitter voltage v (v) ce c area of safe operaion 5 tc = 25 ? 1 5 2 10 20 50 0.1 0.5 0.2 10 1000 5000 l = 180 ? i = ? a duty < 1 % tc = 25? b2 10 tc = ?5 ? 25 ? 75 ? v = 5 v ce 0.8 a 1.4 a 1.2 a 1.0 a 0.6 a 0.4 a 0.2 a pc = 50 w b i = 0
2SC5480 4 0.05 10 2 5 1 0.1 0.2 0.5 0.1 0.5 0.2 1 2 5 10 0.1 0.2 0.5 1 2 5 10 10 5 0 0.8 0.6 0.4 0.2 0 1.0 1.4 1.8 2.2 2.6 collector to emitter saturation voltage ce(sat) v (v) collector current i (a) c collector to emitter saturation voltage vs. collector current collector current i (a) c base to emitter saturation voltage v (v) be(sat) base to emitter saturation voltage vs. collector current base current i (a) b collector to emitter saturation voltage v (v) ce(sat) collector to emitter saturation voltage vs. base current fall time t (?) f base current i (a) b1 fall time vs. base current tc = 25? 7 a i = 5 a c 3.0 0.2 0.5 1 25 20 10 0.1 0.2 0.5 1 25 20 10 i / i = 4 cb tc = ?5 ? 25 ? 75 ? i / i = 4 c b tc = ?5? 25 ? 75 ? 3.4 i = 7 a f = 31.5 khz tc = 25? cp h 0.1 9 a
2SC5480 5 package dimensions (unit: mm) 16.0 max 5.8 max 1.4 max 2.6 4.0 1.6 2.7 1.4 max 5.0 3.2 f 3.2 5.0 0.3 19.9 0.3 21.0 0.5 0.66 5.45 0.5 5.45 0.5 0.9 hitachi code eiaj jedec to?pfm +0.2 ?.1 +0.2 ?.1
2SC5480 6 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachis sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ?hitachi, ltd., 1998. all rights reserved. printed in japan. hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 049318 tel: 535-2100 fax: 535-1533 url northamerica : http:semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia (singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm asia (taiwan) : http://www.hitachi.com.tw/e/product/sicd_frame.htm asia (hongkong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. taipei branch office 3f, hung kuo building. no.167, tun-hwa north road, taipei (105) tel: <886> (2) 2718-3666 fax: <886> (2) 2718-8180 hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road, tsim sha tsui, kowloon, hong kong tel: <852> (2) 735 9218 fax: <852> (2) 730 0281 telex: 40815 hitec hx hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 778322 hitachi europe gmbh electronic components group dornacher stra? 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 2000 sierra point parkway brisbane, ca 94005-1897 tel: <1> (800) 285-1601 fax: <1> (303) 297-0447 for further information write to:
|
